Supporting Information for Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
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Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.
We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances o...
متن کاملLow - Resistance 2 D / 2 D Ohmic Contacts : A Universal Approach to 2 High - Performance WSe 2 , MoS 2 , and MoSe 2 Transistors
2 High-Performance WSe2, MoS2, and MoSe2 Transistors 3 Hsun-Jen Chuang,† Bhim Chamlagain,† Michael Koehler,‡ Meeghage Madusanka Perera,† Jiaqiang Yan,‡,§ 4 David Mandrus,‡,§ David Tomańek, and Zhixian Zhou*,† 5 †Physics and Astronomy Department, Wayne State University, Detroit, Michigan 48201, United States 6 ‡Department of Materials Science and Engineering, The University of Tennessee, Knoxvil...
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